In this study, we investigated the physical and chemical properties of H
2 plasma-treated tin oxide (SnO
X) thin films, followed by their applications in ambipolar thin-film transistors (TFTs). Finely controlled H
2 implantation was carried out using a reactive-ion-etching system at a radio frequency power of 30 W and under various exposure times. H
2 plasma treatments induced changes in the chemical structures and surface morphologies of the SnO
X thin films, including a partial phase transformation of Sn and SnO to SnO
2. The defects originating from oxygen vacancies (O
Vacs) in the SnO
X thin films were passivated by H via the formation of Sn–H bonds, which decreased the density of subgap states in the SnO
X thin films. The H
2 plasma-treated SnO
X TFTs showed considerably improved ambipolarity and electrical performance. Complementary metal–oxide–semiconductor (CMOS) logic inverters comprising H
2-plasma-treated ambipolar SnO
X TFTs exhibited a maximum gain of 34.5 V/V at a supply voltage of 10 V. The results of this study present the meaningful investigation of H
2 plasma-treated ambipolar SnO
X TFTs that can be used to fabricate CMOS circuits for various applications.
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